Indium doped CsPbI3 films for inorganic perovskite solar cells
<p>In recent years, all-inorganic perovskite materials have set off a research boom owing to features, such as good thermal stability, suitable bandgap, and fascinating optical properties. However, the power conversion efficiency (PCE) and the ambient stability of all-inorganic perovskite solar cells still remain a challenge. Herein, we investigate the effect of the addition
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Supporting Information for Perovskite Solar Cells Cerium-Doped Indium
Photovoltaic parameters of a perovskite top cell with a separate SHJ solar cell, a SHJ bottom cell, and 4T perovskite/silicon tandem solar cell. Device VOC (V) JSC (mA cm-2) Fill Factor (%) PCE (%) Perovskite top cell 1.20 20.75 76.10 18.96 Stand-alone SHJ cell 0.72 38.72 79.79 22.18 SHJ bottom cell 0.65 14.96 80.17 7.82 4 T tandem solar cell
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Impurity photovoltaic effect in indium-doped silicon solar cells
Impurity photovoltaic effect is investigated in two groups of indium-doped single-crystalline silicon solar cells with n-type and p-type dopants in the base layer.The continuity equation for minority carriers is solved numerically using the charge neutrality condition and current–voltage characteristics are found.
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Enhanced inverted perovskite solar cells via indium doped nickel
In this work, the electrochemical deposition (ECD) of indium-doped NiOx layers (NiOxIn) on indium tin oxide (ITO) substrates was investigated for the first time and their properties as HTL in
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Source Material Design for Realizing >50% Indium-Saving
As compared with our reference hydrogenated cerium-doped indium oxide (ICO)-based solar cells, the IZO-based devices show even higher fill factor parameters. Our amorphous state stable In-reduced IZO film could find versatile application in the sustainable development of temperature-sensitive devices such as SHJ and perovskite/silicon tandem solar cells, as well
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Indium‐Doped Silicon for Solar Cells
Indium-doped silicon is considered as a possible p-type material for solar cells to avoid light-induced degradation (LID) which occurs in the cells made from boron-doped Czochralski (Cz)...
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85% indium reduction for high-efficiency silicon heterojunction solar
Aluminum-doped zinc oxide (AZO) has long been known as a promising low-cost alternative contact to conventional expensive indium-doped tin oxide (ITO) on silicon heterojunction (SHJ) solar cells.
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Effects of co-doping the SnO
We have used a solution-based approach to incorporate boron (B) and indium (In) dopants into the conventional SnO 2 electron transport layer (ETL) to create high
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Solar Energy Materials and Solar Cells
Complete solar cell device is fabricated using TiO 2 and (2,2,7,7-tetrakis(N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene) Efficient indium-doped TiOx electron transport layers for high-performance perovskite solar cells and perovskite-silicon tandems. Adv. Energy Mater., 7 (2017), p.
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85% Indium Reduction for High-Efficiency Silicon Heterojunction Solar
Al-doped zinc oxide (AZO) is a potential candidate to substitute tin-doped indium oxide in silicon heterojunction (SHJ) solar cells due to its low cost and low ecological impact.
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In‐Doped ZnO Electron Transport Layer for
Thus, flexible organic solar cells based on sol–gel processed ZnO exhibit significantly lower efficiency than rigid devices. In this paper, an indium-doping approach is developed to improve the optoelectronic properties
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Advancement in Copper Indium Gallium Diselenide (CIGS)-Based
Copper indium gallium selenide (CIGS)-based solar cells have received worldwide attention for solar power generation. CIGS solar cells based on chalcopyrite quaternary semiconductor CuIn 1-x GaxSe 2 are one of the leading thin-film photovoltaic technologies owing to highly beneficial properties of its absorber, such as tuneable direct band gap (1.0–1.7 eV),
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Tantalum doped tin oxide enabled indium-free silicon
To avoid the use of indium, basic strategies include: (a) developing TCO-free SHJ solar cells; (b) using indium-free TCO materials such as aluminum-doped zinc oxide (AZO) [16], [17], which has attracted much attention.Although the concept of TCO-free SHJ solar cells has been demonstrated, development has been hindered by contact and passivation issues [18].
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Organic‐free indium‐doped cesium lead iodide
Herein, organic-free all-solid-state based perovskite solar cells (PSCs) are successfully fabricated by one-step method. The absorption position of the non-perovskite cesium lead iodide (δ-CsPbI 3) was significantly shifted
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Enhanced inverted perovskite solar cells via indium doped nickel
Highlights • Indium-doped NiOx layers as HTL in inverted perovskite solar cells. • The champion cell was based on NiOxIn-0.5% with a PCE of 20.06%. • Favorable
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Diffusion-Doped InP Solar Cells for Ultralight Space Power
Indium phosphide (InP) thin film solar cells have considerable potential for low-cost space photovoltaic applications due to their efficiency, ultralight weight form factor, favorable surface recombination properties, optimal bandgap, and innately high radiation resistance compared to silicon and gallium arsenide (GaAs). However, InP cells have received less attention than their
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Reducing Indium Consumption in Silicon Hetero Junction Solar Cells
Over the last years, the dominating charge carrier transport barrier in silicon heterojunction (SHJ) solar cells could be boiled down to the contact of the indium–tin oxide (ITO) to the doped
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Low-cost Sn-doped indium oxide films with high mobility by
Sn-doped indium oxide (ITO) film is one of the widely used transparent conductive oxide (TCO) materials. In recent years, reactive plasma deposition (RPD)
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Tungsten doped indium oxide (IWO) transparent electrode used
The common transparent electrode materials used in perovskite solar cells (PSCs), for example, the tin-doped indium oxide (ITO), usually have low carrier mobility and low transmittance in the near-infrared region which limits the short circuit current density (J SC).Accordingly, it is urgent to seek a novel transparent conductive material with high mobility
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Indium‐Doped Silicon for Solar Cells—Light‐Induced
Indium-doped silicon is considered a possible p-type material for solar cells to avoid light-induced degradation (LID), which occurs in cells made from boron- doped Czochralski (Cz) silicon.
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Solar Energy Materials and Solar Cells
In this work, we perform accelerated Na + aging tests to study the impact of Na + ions on SHJ solar cells without encapsulation in an 85 °C and 85% relative humidity (DH85) climate chamber. We elucidate that Na + ions affect the electrical and optical properties of tungsten-doped indium oxide (IWO) thin films and degrade the passivation of a-Si:H layers in
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Monolithic perovskite/silicon tandem solar cells with optimized
As the dominant workhorse in the photovoltaic market, crystalline silicon (c-Si) cells have reached a high power conversion efficiency (PCE) of 26.7% [1], [2], approaching their theoretical Shockley-Queisser limit of 29.4% [3], [4].Recently, silicon-based tandem solar cells integrated with a metal halide perovskite absorber have shown a promising potential to obtain
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Indium oxide buffer layer for perovskite/Si 4-terminal tandem solar
Solar cell technology has attracted significant attention over the past decades as a promising avenue for developing renewable energy sources and mitigating the environmental problems [1], [2].Silicon based solar cells have long dominated the market, owing to their mature technology and high power conversion efficiency (PCE) [3], [4].However, perovskite solar cells (PSCs)
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Study on the hydrogen doped indium oxide for silicon heterojunction
Tin-doped indium oxide (In 2 O 3:Sn or ITO) thin film is the most widely used type of transparent conductive oxide (TCO) thin film because of its outstanding electrical and optical properties.For several decades, ITO has been used in many practical applications, including liquid-crystal displays [1], flat-panel displays [2], touch-panel technologies [3], and
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Reducing Indium Consumption in Silicon Hetero Junction Solar Cells
This article reports on the reduction of indium consumption in bifacial rear emitter n-type silicon heterojunction (SHJ) solar cells by substituting the transparent conducting oxide (TCO) indium tin oxide (ITO) with aluminum doped zinc oxide (AZO). AZO, ITO, and stacks of both TCOs are sputtered at room temperature and 170 °C on both sides of SHJ solar cells
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Efficient and Less‐Toxic Indium‐Doped MAPbI3 Perovskite Solar
Using the proposed approach, we fabricated stable and efficient Pb–In perovskite solar cells (PSCs) with a maximum power conversion efficiency (PCE) of 21.2%,
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Organic solar cells incorporating buffer layers from indium doped
Monodisperse, indium doped zinc oxide (IZO) nanoparticles were prepared via the polyol-mediated synthesis and incorporated into regular and inverted poly-(3-hexylthiophene-2,5-diyl) and [6,6]-phenyl C 61-butyric acid methyl ester organic photovoltaic devices as buffer layers between the active layer and the cathode.Efficient hole blocking at the particle buffer
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Organic-free indium-doped cesium lead iodide perovskite for solar cell
Indium ion showed characteristic peaks of orthorhombic structure with a space group of Pnma. With an increase in ''In'' content in In-doped CsPbI3 solar cells show high stability. The increasing stability of the doped PSCs is due to dual performance of the In ions, tuning optical absorption and stability. Luo et al.
View more6 FAQs about [Indium-doped solar cells]
Is indium-doped silicon a p-type material for solar cells?
The data that support the findings of this study are available from the corresponding author upon reasonable request. Indium-doped silicon is considered a possible p-type material for solar cells to avoid light-induced degradation (LID), which occurs in cells made from boron-doped Czochralski (Cz) silicon.
Can evaporating indium tin alloy reduce the cost of SHJ solar cells?
The use of evaporating indium tin alloy and reacting with oxygen to prepare ITO film is conducive to lower the cost of SHJ solar cells, and a conversion efficiency of 25.38 % is achieved. Sn-doped indium oxide (ITO) film is one of the widely used transparent conductive oxide (TCO) materials.
What is SN-doped indium oxide (ITO) film?
Sn-doped indium oxide (ITO) film is one of the widely used transparent conductive oxide (TCO) materials. In recent years, reactive plasma deposition (RPD) technology has been used to prepare high-quality ITO film. Here, indium tin alloy is used to replace indium tin oxide as the evaporation source of RPD.
Do indium-doped Niox layers have electrochemical deposition properties?
In this work, the electrochemical deposition (ECD) of indium-doped NiOx layers (NiOxIn) on indium tin oxide (ITO) substrates was investigated for the first time and their properties as HTL in IPSCs were evaluated.
Can indium-doping improve the optoelectronic properties of ZnO layers?
In this paper, an indium-doping approach is developed to improve the optoelectronic properties of ZnO layers and reduce the required annealing temperature. Inverted OSCs based on In-doped ZnO (IZO) exhibit a higher efficiency than those based on ZnO for a range of different active layer systems.
What annealing temperature can be reduced after doping with indium?
In addition, after doping with indium, the annealing temperature can be decreased to 140 °C, which is suitable for flexible substrate. An ultrathin flexible device with a total thickness of 1.2 µm is also developed using IZO ETL, achieving an efficiency of 17.0%.
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